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HCS244MS
September 1995
Radiation Hardened Octal Buffer/Line Driver, Three-State
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20 TOP VIEW
OE 1 A0 1 Y3 2 A1 1 Y2 2 A2 1 Y1 2 1 2 3 4 5 6 7 8 9 10 20 VCC
Features
* 3 Micron Radiation Hardened CMOS SOS * Total Dose 200K RAD (Si)/s * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) * Dose Rate Survivability: >1 x 1012 RAD (Si)/s * Dose Rate Upset >10
10
19 2 OE 18 1 Y0 17 2 A3 16 1 Y1 15 2 A2 14 1 Y2 13 2 A1 12 1 Y3 11 2 A0
RAD (Si)/s 20ns Pulse
* Latch-Up Free Under Any Conditions * Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * Input Logic Levels - VIL = 0.3 VCC Max - VIH = 0.7 VCC Min * Input Current Levels Ii 5A at VOL, VOH
OE 1 A0 1 Y3 2 A1 1 Y2 2 A2 1 Y1 2 A3 1 Y0 2 GND
A3 1 Y0 2 GND
20 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20 TOP VIEW
1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC 2 OE 1 Y0 2 A3 1 Y1 2 A2 1 Y2 2 A1 1 Y3 2 A0
Description
The Intersil HCS244MS is a Radiation Hardened NonInverting Octal Buffer/Line Driver, Three-State, with two active-low output enables. The HCS244MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS244MS is supplied in a 20 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER HCS244DMSR HCS244KMSR HCS244D/Sample HCS244K/Sample HCS244HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 20 Lead SBDIP 20 Lead Ceramic Flatpack 20 Lead SBDIP 20 Lead Ceramic Flatpack Die DB NA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Number File Number
312
518763 2132.2
HCS244MS Functional Diagram
1Y0 18 1Y1 16 1Y2 14 1Y3 12 2Y0 9 2Y1 7 2Y2 5 2Y3 3
N
P
N
P
N
P
N
P
P
N
P
N
P
N
P
N
1 1OE 2 1A0 4 1A1 6 1A2 8 1A3 11 2A0 13 2A1 15 2A2 17 2A3
19 2OE
TRUTH TABLE INPUTS 1OE, 2OE L L H H L X Z = = = = High Voltage Level Low Voltage Level Immaterial High Impedance A L H X OUTPUT Y L H Z
Spec Number 313
518763
Specifications HCS244MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 3.15V, IOL = 50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOL = 50A, VIL = 1.65V Output Voltage High VOH VCC = 4.5V, VIH = 3.15V, IOH = -50A, VIL = 1.35V VCC = 5.5V, VIH = 3.85V, IOH = -50A, VIL = 1.65V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 7.2 6.0 -7.2 -6.0 MAX 40 750 0.1 UNITS A A mA mA mA mA V
PARAMETER Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
V
1 2, 3
+25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC
0.5 5.0 1 50 -
A A A A -
Three-State Output Leakage Current
IOZ
Applied Voltage = 0V or VCC, VCC = 5.5V
1 2, 3
Noise Immunity Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2)
7, 8A, 8B
NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 314
518763
Specifications HCS244MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 Enable to Output TPZL VCC = 4.5V 9 10, 11 Enable to Output TPZH VCC = 4.5V 9 10, 11 Disable to Output TPLZ TPHZ VCC = 4.5V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 2 2 2 2 2 2 2 2 MAX 21 25 25 30 20 24 25 30 UNITS ns ns ns ns ns ns ns ns
PARAMETER Propagation Delay Data to Output
SYMBOL TPLH TPHL
(NOTES 1, 2) CONDITIONS VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1 1 Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 1 Output Transition Time TTHL TTLH VCC = 4.5V 1 1 NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TEMPERATURE +25oC +125oC, -55oC +25oC +125oC +25oC +125oC, -55oC MIN MAX 45 45 10 10 12 18 UNITS pF pF pF pF ns ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL ICC IOL (NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V TEMPERATURE +25oC +25oC MIN 6.0 MAX 0.75 UNITS mA mA
Output Current (Source)
IOH
+25oC
-6.0
-
mA
Spec Number 315
518763
Specifications HCS244MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS PARAMETER Output Voltage Low SYMBOL VOL (NOTES 1, 2) CONDITIONS VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50A VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOH = -50A Applied Voltage = 0V or 5.5V, VCC = 5.5V TEMPERATURE +25oC MIN MAX 0.1 UNITS V
Output Voltage High
VOH
+25oC
VCC -0.1 -
-
V
Three-State Output Leakage Current Input Leakage Current Noise Immunity Functional Test Propagation Delay Data to Output Enable to Output Enable to Output Disable to Output
IOZ
+25oC
50 5 -
A A -
IIN FN
VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 3) VCC = 4.5V
+25oC +25oC
-
TPLH, TPHL TPZL TPZH TPLZ, TPHZ
+25oC
2
25
ns
VCC = 4.5V VCC = 4.5V VCC = 4.5V
+25oC +25oC +25oC
2 2 2
30 24 30
ns ns ns
NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5 5
PARAMETER ICC IOL/IOH IOZL/IOZH
DELTA LIMIT 12A -15% of 0 Hour 200nA
Spec Number 316
518763
Specifications HCS244MS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H, IOZL/H READ AND RECORD ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H
TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% go/no-go. TEST METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN STATIC I BURN-IN (Note 1) 3, 5, 7, 9, 12, 14, 16, 18 STATIC II BURN-IN (Note 1) 3, 5, 7, 9, 12, 14, 16, 18 DYNAMIC BURN-IN (Note 2) NOTES: 1. Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in 2. Each pin except VCC and GND will have a resistor of 680 5% for dynamic burn-in 1, 10, 19 3, 5, 7, 9, 12, 14, 16, 18 20 2, 4, 6, 8, 11, 13, 15, 17 10 1, 2, 4, 6, 8, 11, 13, 15, 17, 19, 20 1, 2, 4, 6, 8, 10, 11, 13, 15, 17, 19 20 GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 3, 5, 7, 9, 12, 14, 16, 18 GROUND 10 VCC = 5V 0.5V 1, 2, 4, 6, 8, 11, 13, 15, 17, 19, 20
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 317
518763
HCS244MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
Spec Number 318
518763
HCS244MS AC Timing Diagrams
VIH VS VIL TPLH TPHL VOH VS VOL TTLH 80% VOL 20% 80% 20% TTHL OUTPUT CL = 50pF RL = 500 CL RL INPUT
AC Load Circuit
DUT TEST POINT
VOH
OUTPUT
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCS 4.50 3.00 1.30 0 0 UNITS V V V V V
Three-State Low Timing Diagrams
VIH VS VIL TPZL TPLZ VOZ VT VOL OUTPUT VW INPUT
Three-State Low Load Circuit
RL
DUT
TEST POINT CL CL = 50pF RL = 500
THREE-STATE LOW VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCS 4.50 4.50 2.25 2.25 0.90 0 UNITS V V V V V V
Spec Number 319
518763
HCS244MS Three-State High Timing Diagrams
VIH VS VIL TPZH TPHZ VOH CL VT VOZ OUTPUT VW INPUT RL CL = 50pF RL = 500
Three-State High Load Circuit
DUT TEST POINT
TRI-STATE HIGH VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCS 4.50 4.50 2.25 2.25 3.60 0 UNITS V V V V V V
Spec Number 320
518763
HCS244MS Die Characteristics
DIE DIMENSIONS: 108 x 106 mils METALLIZATION: Type: Al/Sil Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 mils x 4 mils
Metallization Mask Layout
HCS244MS
Y3 2 (3) A0 1 (2) OE (1) VCC (20) OE 2 (19)
(18) Y0 1
A1 1 (4) (17) A3 2 Y2 2 (5)
(16) Y1 1 A2 1 (6) (15) A2 2
Y1 2 (7) (14) Y2 1
(8) A3 1
(9) Y0 2
(10) GND
(11) A0 2
(12) Y3 1
(13) A1 2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 321
518763

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